A low phase noise W-band MMIC GaN HEMT oscillator
Paper i proceeding, 2020

This paper presents a fundamental mode W-band MMIC balanced Colpitts oscillator implemented in an advanced 60 nm gallium nitride (GaN) high electron mobility transistor (HEMT) process from OMMIC foundry. The oscillator operates around 85 GHz with measured peak output power of nearly 0 dBm and phase noise at 10 MHz offset of -120 dBc/Hz. To the best authors’ knowledge, the phase noise is state-of-the-art value for W-band monolithic microwave integrated circuit (MMIC) GaN HEMT oscillators.

—oscillator

monolithic microwave integrated circuit (MMIC)

phase noise

gallium nitride (GaN)

millimeter-wave

W-band (75-110 GHz).

HEMT

Författare

Thi Ngoc Do Thanh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Yu Yan

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Asia-Pacific Microwave Conference Proceedings, APMC

115-115

2020 Asia Pacific Microwave Conference
Hongkong, China,

GaN mm-wave Radar Components Embedded (GRACE)

Europeiska kommissionen (EU), 2018-11-01 -- 2020-10-31.

Styrkeområden

Informations- och kommunikationsteknik

Infrastruktur

Kollberglaboratoriet

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/APMC47863.2020.9331430

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Senast uppdaterat

2021-02-25