L-Band LDMOS Power Amplifiers Based on an Inverse Class-F Architecture
Artikel i vetenskaplig tidskrift, 2005

Two inverse Class F power amplifiers working at 1 GHz and 1.8 GHz respectively have been developed. The PAs use a LDMOS transistor as an active element in order to generated high efficiency with high output power. The 1 GHz PA achieved a drain efficiency of 77.8 % with 12.4 W of output power and the 1.8 GHz PA a drain efficiency of 60 % with 13 W of output power. To our knowledge these results represent the highest efficiency and output power for an inverse Class F PA based on a single LDMOS transistor working at these frequencies.

Författare

Fabien Lepine

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Andreas Ådahl

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Publicerad i

IEEE Transactions on Microwave Theory and Techniques

Vol. 53 Nummer/häfte 6 s. 2007-2012

Kategorisering

Ämneskategorier (SSIF 2011)

Annan elektroteknik och elektronik

Identifikatorer

Mer information

Skapat

2017-10-08