L-Band LDMOS Power Amplifiers Based on an Inverse Class-F Architecture
Artikel i vetenskaplig tidskrift, 2005

Two inverse Class F power amplifiers working at 1 GHz and 1.8 GHz respectively have been developed. The PAs use a LDMOS transistor as an active element in order to generated high efficiency with high output power. The 1 GHz PA achieved a drain efficiency of 77.8 % with 12.4 W of output power and the 1.8 GHz PA a drain efficiency of 60 % with 13 W of output power. To our knowledge these results represent the highest efficiency and output power for an inverse Class F PA based on a single LDMOS transistor working at these frequencies.

Författare

Fabien Lepine

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Andreas Ådahl

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Microwave Theory and Techniques

Vol. 53 6 2007-2012

Ämneskategorier

Annan elektroteknik och elektronik

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2017-10-08