RF noise model for CMOS Transistors
Paper i proceeding, 2005

A RF Noise model for submicron CMOS transistors is proposed and implemented in commercial CAD tool. The model was experimentally evaluated and shows a good correspondence with the measurements.

FET models

CMOS

Författare

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GHZ 2005 Upsala

Vol. 1 205-209

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