On the Large-Signal Modelling of AlGaN/GaN HEMTs; GaAs ; and SiC MESFETs
Poster (konferens), 2005

General questions concerning selection, modeling and use of different FET made from GaAs, SiC, GaN are discussed.

Large Signal models

FET

Författare

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Invited paper Target Tutorial QS Modeling Orcietto Italy

Vol. 1 101-121

Ämneskategorier

Annan fysik