On the Large-Signal Modelling of AlGaN/GaN HEMTs; GaAs ; and SiC MESFETs
Poster (konferens), 2005
General questions concerning selection, modeling and use of different FET made from GaAs, SiC, GaN are discussed.
Large Signal models
FET
Författare
Iltcho Angelov
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Invited paper Target Tutorial QS Modeling Orcietto Italy
Vol. 1 1 101-121
Ämneskategorier
Annan fysik