Semi-physical nonlinear model for HEMTs with simple equations
Paper i proceeding, 2010

A Nonlinear Circuit Model (NCM) combined with device/physical parameters was developed by using hyperbolic tangent (tanh) function and applied to GaN high electron mobility transistors (HEMTs). The equations for the NCM were constructed to reproduce the results of a device physical simulation. Model parameters are similar with the parameters used in the device design. The simulated DC and capacitance characteristics agree well with the measurement data over wide voltage range. Furthermore, numbers of the parameters were reduced to only 17 by using common physical parameters to both drain current and capacitance models. © 2010 IEEE.

Physical modeling

Simulation

Power amplifiers

GaN HEMT

Transistor models

Microwave

Författare

Toshiyuki Oishi

Mitsubishi Electric Corporation

Hiroshi Otsuka

Mitsubishi Electric Corporation

Koji Yamanaka

Mitsubishi Electric Corporation

A. Inoue

Mitsubishi Electric Corporation

Yoshihito Hirano

Mitsubishi Electric Corporation

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2010 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2010; Goteborg; 26 April 2010 through 27 April 2010

20-23

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/INMMIC.2010.5480149

ISBN

978-142447412-7

Mer information

Skapat

2017-10-08