An Integrated Silicon Based Pressure-Shear Stress Sensor for Turbulence Measurements
Paper i proceeding, 1996

An integrated silicon pressure-shear stress sensor has been designed, fabricated and tested in a turbulent wall-boundary layer. The piezoresisitve pressure sensor is based on a polysilicon diaphragm technology and the thermal shear stress sensor on the gas cooling of a polyimide insulated heated chip. The pressure sensor diaphragm area is 100 x 100 μm, the top area of the shear stress sensor hot chip is 300 x 60 μm and the edge-to-edge distance between the two areas is 100 μm. The measured steady-state power dissipation of the shear stress sensor in a turbulent wall-boundary layer at an over-temperature of 100 degrees Celsius was ___ where ___ is the time-average wall shear stress. The new integrated sensor has been applied for the simultaneous measurement of fluctuating pressure and shear stress in a flat plate boundary layer at a Reynolds number range of ___. Pressure-shear stress correlations coefficients were found between 0.40 and 0.50 for the parallel, and between 0.20 and 0.25 for the perpendicular configuration to the mean flow.


Lennart Löfdahl

Chalmers, Institutionen för termo- och fluiddynamik

Edvard Kälvesten

Therdoros Hadzianagnostakis

Chalmers, Institutionen för termo- och fluiddynamik

Göran Stemme

Advances in Turbulence VI (eds. Gavrilakis et al.), Kluwer, pp. 465-469.


Strömningsmekanik och akustik