Large Signal Model and Implementation of Impact Ionization for FET Devices
Paper i proceeding, 2010

This paper presents a large signal model of impact ionization effects(Ii) of FETs and its CAD implementation. The Ii model is compact, describes the effects observed in the gate and drains current in a simple way, converges well in harmonic balance simulation. The model is verified for various FET devices and materials like GaAs SiC,GaN, and InSb. By using this model, the prediction accuracy for Pout and PAE is improved, especially when the device is pushed to the limits and impact ionization can be observed. When aware for the problem, the designer is able to construct in a better way the input and output matching circuits to avoid operating the device in the dangerous regions of operation and hence improve reliability.

LS models



Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Mattias Ferndahl

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Asia-Pacific Microwave Conference, APMC 2010; Yokohama; Japan; 7 December 2010 through 10 December 2010

978-490233922-2 (ISBN)



Elektroteknik och elektronik



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