Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
Artikel i vetenskaplig tidskrift, 2011

A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.

bilayer graphene

transistors

Författare

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Kasper Moth-Poulsen

University of California

R. Yakimova

Linköpings universitet

T. Bjornholm

Köbenhavns Universitet

V. Fal'ko

Lancaster University

A.Y. Tzalenchuk

National Physical Laboratory (NPL)

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Advanced Materials

0935-9648 (ISSN)

Vol. 23 7 878-+

Ämneskategorier

Fysik

DOI

10.1002/adma.201003993