Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
Artikel i vetenskaplig tidskrift, 2011
A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.
bilayer graphene
transistors
Författare
Samuel Lara Avila
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Kasper Moth-Poulsen
University of California
R. Yakimova
Linköpings universitet
T. Bjornholm
Köpenhamns universitet
V. Fal'ko
Lancaster University
A.Y. Tzalenchuk
National Physical Laboratory (NPL)
Sergey Kubatkin
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Advanced Materials
09359648 (ISSN) 15214095 (eISSN)
Vol. 23 7 878-+Ämneskategorier
Fysik
DOI
10.1002/adma.201003993