Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
Journal article, 2011

A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.

bilayer graphene



Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Kasper Moth-Poulsen

University of California

R. Yakimova

Linköping University

T. Bjornholm

University of Copenhagen

V. Fal'ko

Lancaster University

A.Y. Tzalenchuk

National Physical Laboratory (NPL)

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Advanced Materials

09359648 (ISSN) 15214095 (eISSN)

Vol. 23 7 878-+

Subject Categories

Physical Sciences



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