Higher speed VCSELs by photon lifetime reduction
Konferensbidrag (offentliggjort, men ej förlagsutgivet), 2011

The impedance characteristics and the effects of photon lifetime reduction on the performance of high-speed 850 nm VCSELs are investigated. Through S 11 measurements and equivalent circuit modeling we show that the parasitic mesa capacitance can be significantly reduced by using multiple oxide layers. By performing a shallow surface etch (25 - 55 nm) on the fabricated VCSELs, we are able to reduce the photon lifetime by up to 80% and thereby significantly improve both static and dynamic properties of the VCSELs. By optimizing the photon lifetime we are able to enhance the 3dB modulation bandwidth of 7 μm oxide aperture VCSELs from 15 GHz to 23 GHz and finally demonstrate errorfree transmission at up to 40 Gbit/s.

damping

high speed modulation

electrical parasitics

VCSEL

Författare

Petter Westbergh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Benjamin Kögel

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Åsa Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

A. Joel

IQE Europe Ltd.

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN)

Vol. 7952 79520K

Ämneskategorier

Telekommunikation

DOI

10.1117/12.873161

ISBN

978-081948489-5