Higher speed VCSELs by photon lifetime reduction
Conference contribution, 2011

The impedance characteristics and the effects of photon lifetime reduction on the performance of high-speed 850 nm VCSELs are investigated. Through S 11 measurements and equivalent circuit modeling we show that the parasitic mesa capacitance can be significantly reduced by using multiple oxide layers. By performing a shallow surface etch (25 - 55 nm) on the fabricated VCSELs, we are able to reduce the photon lifetime by up to 80% and thereby significantly improve both static and dynamic properties of the VCSELs. By optimizing the photon lifetime we are able to enhance the 3dB modulation bandwidth of 7 μm oxide aperture VCSELs from 15 GHz to 23 GHz and finally demonstrate errorfree transmission at up to 40 Gbit/s.

high speed modulation

electrical parasitics

VCSEL

damping

Author

Petter Westbergh

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Benjamin Kögel

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Åsa Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

A. Joel

IQE (Europe) Ltd.

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN) 1996756X (eISSN)

Vol. 7952 79520K

Subject Categories

Telecommunications

DOI

10.1117/12.873161

ISBN

978-081948489-5

More information

Latest update

9/3/2018 2