Potential profiles near the Schottky nanocontacts
Artikel i vetenskaplig tidskrift, 2011

The conventional Schottky model describes in the mean-field approximation the electrostatic potential appearing in a doped semiconductor during its flat contact with a metal. More recently, the Schottky model has been used to describe the mean-field potential profile near a metallic nanosphere surrounded by or located on the surface of a semiconductor. We present the corresponding results for a metallic nanowire. In these three cases, the shape of the potential profiles and their scalings are very different. In particular, the full width at half maximum of the potential barrier dramatically shrinks if the geometry changes from linear to cylindrical and then to spherical. In addition, we scrutinize the effect of the discreteness of the dopant charges on the potential near a metallic nanosphere.

contacts

barrier formation

gaas

interfaces

diodes

dots

Författare

Vladimir Zhdanov

Kompetenscentrum katalys (KCK)

Chalmers, Teknisk fysik, Kemisk fysik

Bengt Herbert Kasemo

Chalmers, Teknisk fysik, Kemisk fysik

Kompetenscentrum katalys (KCK)

Physica E: Low-Dimensional Systems and Nanostructures

1386-9477 (ISSN)

Vol. 43 1486-1489

Ämneskategorier

Fysik

DOI

10.1016/j.physe.2011.04.013