Comprehensive analysis of electrically-pumped GaSb-based VCSELs
Artikel i vetenskaplig tidskrift, 2011

This paper discusses several performance-related aspects of electrically-pumped GaSb-based buried tunnel junction VCSELs with an emission wavelength of 2.6 mu m based on theoretical and experimental results. These results allow a deeper insight into the internal device physics, such as radial diffusion of carriers, maximum continuous-wave operating temperature, diffraction loss, internal temperature, gain and loss parameters, internal quantum efficiency of the active region etc. These parameters can be taken into account while designing mid-infrared lasers which leads to an improved device performance. A simple thermal model of the devices based on the two-dimensional (2-D) finite element method using the material data from the literature is also presented. In addition, an application-based result utilizing these lasers for the measurement of absolute water vapor concentration by wavelength modulation spectroscopy (WMS) method are also described, hinting that devices are well-suited for the targeted sensing applications.

absorption-spectroscopy

2009

vertical-cavity lasers

thermal-conductivity

tsiefer m

modulation

p159

2.3 mu-m

2000

v118

nty f

en j

2006

Författare

S. Arafin

Walter Schottky Institute

A. Bachmann

Walter Schottky Institute

K. Vizbaras

Walter Schottky Institute

A. Hangauer

Walter Schottky Institute

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Jörgen Bengtsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

M. C. Amann

Walter Schottky Institute

Optics Express

1094-4087 (ISSN)

Vol. 19 18 17267-17282

Ämneskategorier

Fysik

DOI

10.1364/OE.19.017267

Mer information

Skapat

2017-10-07