A comprehensive analysis of IMD behavior in RF CMOS power amplifiers
Artikel i vetenskaplig tidskrift, 2004

This paper presents a comprehensive analysis of nonlinear intermodulation distortion (IMD) behavior in RF CMOS power amplifiers (PAs). Separate analyses are presented for small- and large-signal operation regimes. Especially, a new, simple, large-signal behavioral IMD analysis method is presented that allows the mechanisms dominant for IMD generation to be identified and their individual contributions to be studied. By combining these analyses, typical IMD versus input power characteristics of MOSFET PAs can be predicted and understood for different classes of operation. Various measurements made on a 950-MHz RF CMOS PA are used to demonstrate typical behavior and validate the proposed theory. Prediction of IMD using a standard CMOS transistor model is also evaluated and is shown to give good agreement with the measurements.

two-tone measurements

CMOS

large-signal

modeling

intermodulation

power amplifiers

distortion

Författare

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jose C. Pedro

Universidade de Aveiro

Nuno Carvalho

Universidade de Aveiro

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

F. Fortes

Universidade de Lisboa

M.J. Rosário

Universidade de Lisboa

IEEE Journal of Solid-State Circuits

0018-9200 (ISSN)

Vol. 39 1 24-34

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/JSSC.2003.820860

Mer information

Senast uppdaterat

2018-03-29