H-band MMIC amplifiers in 250 nm InP DHBT
Paper i proceeding, 2012

In this paper, single-stage and multistage amplifiers of two different topologies, common-base with resistive feedback and common-emitter, operating at up to 290 GHz are presented and demonstrated. The amplifiers use an indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) process. The multistage common-emitter amplifier demonstrates a gain above 10 dB from 220 to 280 GHz with a peak gain of 15 dB while the multistage common-base amplifier demonstrates a gain of 16 dB at 265 GHz.

monolithic microwave integrated circuit (MMIC)

millimeter-wave

Amplifier

InP double-heterojunction bipolar transistor (DHBT)

H-band

Författare

Klas Eriksson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Vessen Vassilev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012, Warsaw, 21-23 May 2012

Vol. 2 744-747

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MIKON.2012.6233636

ISBN

978-145771435-1