Waveforms-based large-signal identification of transistor models
Paper i proceeding, 2012

Measurements of low-and high-frequency vector-calibrated large-signal waveforms are exploited in this work to identify the parameters of a FET nonlinear model. The I DS nonlinear current source and the nonlinear charge sources' parameters are respectively determined from a small set of low-(2 MHz) and high-frequency (8 GHz) load-pull measurements by using a least square numerical optimization. Under low-frequency operation the contribution of the charge sources and any other reactive element can be neglected. In this way the identification of the IDS parameters is more accurate while remarkably speeding up the optimization routine as well. The proposed procedure is quite general and can be applied to different types of active devices. As case study, a 0.25-μm GaAs pHEMT is considered and the extracted model is validated under conditions different than the ones exploited within the identification step. A very good agreement between model predictions and experimental data is achieved.

Numerical optimization

Large-signal measurements

Transistor nonlinear models

Författare

G. Avolio

KU Leuven

D. Schreurs

KU Leuven

A. Raffo

University of Ferrara

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

G. Crupi

Universita degli Studi di Messina

G. Vannini

University of Ferrara

B. Nauwelaers

KU Leuven

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

6259381

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MWSYM.2012.6259381

ISBN

978-146731087-1