Towards quantitative three-dimensional characterisation of buried InAs quantum dots
Paper i proceeding, 2011

InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 - 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe tomography.

Communication application

New specimen

Scanning transmission electron microscopy

Atom probe tomography

InAs quantum dots

Wavelength ranges

InP

InGaAsP

Recorded signals

Chemical profiles

Författare

S. Kadkhodazadeh

Danmarks Tekniske Universitet (DTU)

E. S. Semenova

Danmarks Tekniske Universitet (DTU)

M. Schubert

Danmarks Tekniske Universitet (DTU)

Mattias Thuvander

Chalmers, Teknisk fysik, Mikroskopi och mikroanalys

Krystyna Marta Stiller

Chalmers, Teknisk fysik, Mikroskopi och mikroanalys

K. Yvind

Danmarks Tekniske Universitet (DTU)

R. E. Dunin-Borkowski

Danmarks Tekniske Universitet (DTU)

Journal of Physics: Conference Series

1742-6588 (ISSN)

Vol. 326 1

Ämneskategorier

Fysik

DOI

10.1088/1742-6596/326/1/012046

Mer information

Senast uppdaterat

2018-02-28