Towards quantitative three-dimensional characterisation of buried InAs quantum dots
Paper in proceedings, 2011

InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 - 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe tomography.

Communication application

New specimen

Scanning transmission electron microscopy

Atom probe tomography

InAs quantum dots

Wavelength ranges

InP

InGaAsP

Recorded signals

Chemical profiles

Author

S. Kadkhodazadeh

Technical University of Denmark (DTU)

E. S. Semenova

Technical University of Denmark (DTU)

M. Schubert

Technical University of Denmark (DTU)

Mattias Thuvander

Chalmers, Applied Physics, Microscopy and Microanalysis

Krystyna Marta Stiller

Chalmers, Applied Physics, Microscopy and Microanalysis

K. Yvind

Technical University of Denmark (DTU)

R. E. Dunin-Borkowski

Technical University of Denmark (DTU)

Journal of Physics: Conference Series

17426588 (ISSN) 17426596 (eISSN)

Vol. 326 1

Subject Categories

Physical Sciences

DOI

10.1088/1742-6596/326/1/012046

More information

Latest update

2/28/2018