Highly linear gallium nitride MMIC LNAs
Paper i proceeding, 2012

In this paper, two Low Noise Amplifiers designed in Gallium Nitride HEMT MMIC technology are presented. The focus of the designs is to achieve good linearity at low power consumption and acceptable noise figure. The first design achieves an OIP3/PDC of 12 using traditional LNA design techniques. In a second design, the OIP3 is improved by 2 dB, raising OIP3/PDC to 19, among the highest figures reported for GaN LNAs. This is achieved by using both inductive source feedback and drain-gate RC feedback.

Low-noise amplifiers

MMICs

Gallium Nitride

HEMTs

Linearity

Författare

Olle Axelsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Kristoffer Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012

1550-8781 (ISSN)

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/CSICS.2012.6340109

ISBN

978-1-4673-0929-5