Highly integrated E-band direct conversion receiver
Paper i proceeding, 2012

This paper presents a highly integrated 70-98 GHz direct conversion receiver with 3 stage LNA, x6 frequency multiplier with buffer amplifier, and IQ-mixer suitable for Eband radio communication. The LNA, x6 and IQ-mixer are also presented separately. The LNA covers 65 to 95 GHz with 15 dB gain and minimum 5.5 dB noise figure, x6 covers 71 to 91 GHz with 0 to 8 dBm output power and the IQ-mixer an RF frequency from 70 to 95 GHz and IF frequency from DC to 12 GHz with only 8 dB conversion loss and better than 15 dB image reject. The complete receiver circuit shows an RF bandwidth of 70 to 98 GHz, LO bandwidth of 75 to 92 GHz and IF bandwidth from DC to more than 12 GHz. The conversion gain is 3 to 6 dB with a noise figure of 5 to 7 dB, the image rejection 15 dB to as high as 28 dB, and the input 1 dB compression point -12 dBm.

HEMT

wideband

backhaul

E-band

GaAs

Författare

Mattias Ferndahl

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Marcus Gavell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Morteza Abbasi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012

1550-8781 (ISSN)

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/CSICS.2012.6340099

ISBN

978-1-4673-0929-5

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Skapat

2017-10-07