RF characterization of cold-electron bolometer integrated with a unilateral finline
Paper i proceeding, 2012

The Cold-Electron Bolometer (CEB) is a very sensitive millimetre-wave detector with high saturation power, fast response and is easy to integrate with planar circuits. We have designed, fabricated and tested CEB detectors integrated across the slot of a unilateral finline on silicon substrate. Bolometers were fabricated using e-beam direct-write trilayer technology. The CEB performance was tested in a He3 sorption cryostat HELIOX-AC-V at a bath temperature of 310 mK. DC IV curves were measured in a current bias mode and optical response was measured by irradiating samples with signals from a black body source mounted inside the cryostat. The finline chip with CEB device was mounted in a waveguide block and connected to the readout system by bond-wires. The RF signal was focused onto the waveguide input using a horn. The signal response was obtained by comparing different IV curves in current-biased mode at different temperatures of the RF source. The response measured as a voltage difference between the IV curves taken at the source temperatures of 5 K and 20 K was about 155 μV.

RF testing

Nanotechnology

Millimeter-wave detectors

Nanodevices

e-beam lithography

Författare

Ernst Otto

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

P. K. Grimes

University of Oxford

Smithsonian Astrophysical Observatory

G. Yassin

University of Oxford

Mikhail Tarasov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Leonid Kuzmin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

S. Withington

University of Cambridge

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN)

Vol. 8452 Art. no. 84521X- 84521X

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1117/12.926201

ISBN

978-081949153-4

Mer information

Senast uppdaterat

2018-05-02