Broadband Gm-boosted differential HBT doublers with transformer balun
Paper i proceeding, 2011

Broadband monolithic InGaP HBT frequency doublers for K-Band application have been developed. The designs employ a Gm-boosted differential common-base configuration using either capacitive or transformer-based coupling between base and emitters. The design with cross-coupled capacitors presents a fundamental rejection better than 20 dB over a 100% 3dB bandwidth, extending from 6-18 GHz. The transformer-coupled design has about 15dB fundamental rejection over a slightly narrower bandwidth extending from 7-16 GHz. Both doublers have conversion gain peaking at more than -0.8dB and output power more than 13 dBm.

InGaP HBT

Frequency Doubler

Capacitor-crossed coupling

Transformer balun

Författare

J. Zhang

Queen's University Belfast

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IET Seminar Digest. Active RF Devices, Circuits and Systems Seminar, 12 September 2011

Vol. 2011 29-32

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1049/ic.2011.0210

ISBN

978-184919540-9