Photoemission and low energy electron microscopy study on the formation and nitridation of indium droplets on Si (111)7 x 7 surfaces
Artikel i vetenskaplig tidskrift, 2013

The formation and nitridation of indium(In) droplets on Si (1 1 1)7 x 7, with regard to In droplet epitaxy growth of InN nanostructures, were studied using a spectroscopic photoemission and low energy electron microscopy, for the In coverages from 0.07 to 2.3 monolayer (ML). The results reveal that the In adatoms formed well-ordered clusters while keeping the Si (1 1 1)7 x 7 surface periodicity at 0.07 ML and a single root 3 x root 3 phase at 0.3 ML around 440-470 degrees C. At 0.82 ML, owing to the presence of structurally defect areas beside the 7 x 7 domains, 3-D In droplets evolved concomitantly with the formation of 4 x 1-In cluster chains, accompanied by a transition in surface electric property from semiconducting to metallic. Further increasing the In to 2.3 ML led to a moderate increase in number density and an appreciable lateral growth of the droplets, as well as the multi-domain In phases. Upon nitridation with NH3 at similar to 480 degrees C, besides the nitridation of the In droplets, the N radicals also dissociated the In - Si bonds to form Si - N. This caused a partial disintegration of the ordered In phase and removal of the In adatoms between the In droplets.

substrate

reconstructed si(111)

Low-energy electron

inn

Silicon (111)

Droplet epitaxy

Indium

clusters

evolution

diffraction

silicon

growth

band-structure

challenges

Spectroscopic photoemission microscopy

Författare

B. Qi

Háskóli Íslands

S. Olafsson

Háskóli Íslands

M. Gothelid

Kungliga Tekniska Högskolan (KTH)

H. P. Gislason

Háskóli Íslands

Björn Agnarsson

Chalmers, Teknisk fysik, Biologisk fysik

Thin Solid Films

0040-6090 (ISSN)

Vol. 531 61-69

Ämneskategorier

Fysik

DOI

10.1016/j.tsf.2012.12.022