Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects
Artikel i vetenskaplig tidskrift, 2013
This anthology contains contributions from eleven different groups, each developing and/or applying Monte Carlo-based radiation transport tools to simulate a variety of effects that result from energy transferred to a semiconductor material by a single particle event. The topics span from basic mechanisms for single-particle induced failures to applied tasks like developing websites to predict on-orbit single event failure rates using Monte Carlo radiation transport tools.
single event effects
Monte Carlo radiation transport
Författare
R. A. Reed
Vanderbilt University
R. A. Weller
Vanderbilt University
A. Akkerman
Soreq Nuclear Research Center
J. Barak
Soreq Nuclear Research Center
W. Culpepper
National Aeronautics and Space Administration (NASA)
S. Duzellier
ONERA Centre de Toulouse
C. Foster
National Aeronautics and Space Administration (NASA)
M. Gaillardin
Le Commissariat à l’Énergie Atomique et aux Énergies Alternatives (CEA)
G. Hubert
ONERA Centre de Toulouse
T. Jordan
E.M.P. Consultants
I. Jun
California Institute of Technology (Caltech)
S. Koontz
National Aeronautics and Space Administration (NASA)
F. Lei
RadMod Research Ltd.
P. McNulty
Clemson University
M. H. Mendenhall
Vanderbilt University
M. Murat
Soreq Nuclear Research Center
P. Nieminen
Europeiska rymdorganisationen (ESA)
P. O'Neill
National Aeronautics and Space Administration (NASA)
M. Raine
Le Commissariat à l’Énergie Atomique et aux Énergies Alternatives (CEA)
B. Reddell
National Aeronautics and Space Administration (NASA)
F. Saigne
Université de Montpellier
G. Santin
Europeiska rymdorganisationen (ESA)
Rhea Group
Lembit Sihver
Chalmers, Teknisk fysik, Nukleär teknik
H. H. K. Tang
IBM Thomas J. Watson Research Center
P. R. Truscott
Kallisto Consultancy Ltd.
F. Wrobel
Université de Montpellier
IEEE Transactions on Nuclear Science
0018-9499 (ISSN)
Vol. 60 3 1876-1911 6530734Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
DOI
10.1109/tns.2013.2262101