Dilute Bismides for Mid-IR Applications
Kapitel i bok, 2013

Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III–V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in mid-infrared (Mid-IR) optoelectronics. In this chapter, we review recent progresses on epitaxy and characterizations of novel bismides, i.e., GaSb1−x Bi x , InSb1 − x Bi x , InAs1 − x Bi x , and InAsSbBi. Although these dilute bismides have been successfully grown, to obtain high Bi incorporations and retain high crystal quality is still very challenging.

Författare

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Yi Gu

Jun Shao

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Bismuth-Containing Compounds

1-27

Drivkrafter

Hållbar utveckling

Styrkeområden

Nanovetenskap och nanoteknik

Materialvetenskap

Ämneskategorier

Annan materialteknik

Den kondenserade materiens fysik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1007/978-1-4614-8121-8_1

ISBN

978-1-4614-8121-8