Three- and Four-Point Hamer-type MOSFET Parameter Extraction Methods Revisited
Paper i proceeding, 2013

In this paper the three-point Hamer type and four-point Karlsson & Jeppson type MOSFET parameter extraction methods are revisited concerning robustness and selection of data points. The method for fitting models described by rational functions to measured data proposed by Hamming is also discussed and it is shown how this method calculates its weighted data points. An alternative method where MOSFET resistance values are used instead of current values for the extraction procedure is also investigated in an attempt to increase extraction method robustness. Finally, it is shown how the three point extraction method can be applied not only to the triode region but also to the MOSFET saturation region for separating parameters for the body effect and the velocity saturation

Författare

Kjell Jeppson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

IEEE International Conference on Microelectronic Test Structures (ICMTS 2013)

1071-9032 (ISSN)

141-145

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Nanoteknik

DOI

10.1109/ICMTS.2013.6528161

ISBN

978-1-4673-4846-1