A learning tool MOSFET model A stepping-stone from the square-law model to BSIM4
Paper i proceeding, 2013

Students often experience difficulties grasping the gap between simple square-law MOSFET models and advanced BSIM models with a large number of model parameters for modeling the many second-order short-channel effects(SCE). In this paper, a physics-based learning tool MOSFET model is presented with the aim of serving as a stepping-stone between these two models. The model is based on three model parameters in each of the two regions of strong inversion operation. The three-point model parameter extraction scheme is presented to support student learning and hands-on experience. The model is useful both for small-signal parameter calculations in the analog bias region and for calculation of large-signal currents during logic gate transients. Model accuracy is very good, a lot better than first expected, even if geometry variations have not yet been explored.

MOSFET modeling

mobility roll-off


three-point model parameter extraction

velocity saturation


Kjell Jeppson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

23rd International Workshop on Power And Timing Modeling, Optimization and Simulation, PATMOS 2013. Karlsruhe, Deutschland. SEP 09-11, 2013



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