Structure and magneto-transport parameters of partially relaxed and coherently grown La0.67Ba0.33MnO3 films
Artikel i vetenskaplig tidskrift, 2013

X-ray diffraction (XRD) and medium-energy ion scattering (MEIS) have been used to reveal distortions in the crystal lattice of La0.67Ba0.33MnO3 (LBMO) films formed in relaxation of mechanical stresses. The LBMO films 25 nm thick have been prepared by laser deposition. The XRD and MEIS data obtained suggest that biaxially and mechanically elastically stressed LBMO layers grow coherently on LSATO substrates, whose crystal lattice parameter differs only weakly from the corresponding LBMO parameter, whereas in the bulk of manganite films grown on LaAlO3 substrates, stresses relax partially. Stresses do not relax in the LBMO interface about 4 nm thick adjoining LaAlO3. The electro- and magneto-transport parameters of partially relaxed LBMO films have been compared with those obtained for coherently grown manganite films with approximately the same tetragonal distortion of the lattice cell (a (aSyen)/a (aEuro-) = 1.024-1.030; a (aEuro-) and a (aSyen) are the unit cell parameters in the substrate plane and normal to it, respectively). At temperatures substantially lower than the Curie temperature, the electrical resistivity rho of LBMO films fits the relation rho = rho(0) + rho(1) T (2) + rho(2)(H)T (4.5); the coefficients rho(0) and rho(1) do not depend on temperature T and magnetic field, and rho(2) does not depend on temperature but almost linearly decreases with increasing magnetic field strength H. The coefficient rho(2) for partially relaxed LBMO films is substantially larger than that for coherently grown manganite layers.


Yu A. Boikov

Russian Academy of Sciences

I.T. Serenkov

Russian Academy of Sciences

V.I. Sakharov

Russian Academy of Sciences

Tord Claeson

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Alexei Kalaboukhov

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

V. V. Afrosimov

Russian Academy of Sciences

Physics of the Solid State

1063-7834 (ISSN) 1090-6460 (eISSN)

Vol. 55 10 2043-2050


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