Sub-10 nm resolution after lift-off using HSQ./PMMA double layer resist
Artikel i vetenskaplig tidskrift, 2013

Hydrogen silesquioxan (HSQ) is a well-investigated negative tone inorganic resist [1,2] which is known for its capabilities for high resolution electron beam lithography (EBL) and its stability against dry etching [3]. In this paper, we introduce a process to create dense structures by EBL utilizing a layer of polymethyl-methacrylate (PMMA) as sacrificial layer beneath a HSQ layer. The sacrificial layer allows a simple lift-off process to remove the HSQ with organic solvents and thus avoids the use of hydrofluoric acid (HF) containing etchants, which is the commonly used HSQ remover [4]. The described double layer resist system allows patterning on substrates that are not HF compatible such as glass or oxide compounds, achieving a high resolution down to the sub-10 nm regime. Despite the use of a double layer resist, this process is applicable for arbitrarily large areas due to the remaining PMMA underneath the HSQ and the avoidance of undercuts.

Electron beam lithography

HSQJPMMA double layer resist

Sub-10 nm resolution

HF free lift-off



Marcus Rommel


Bengt Nilsson

Chalmers, Mikroteknologi och nanovetenskap, Nanotekniklaboratoriet

Piotr Jedrasik

Chalmers, Mikroteknologi och nanovetenskap, Nanotekniklaboratoriet

Valentina Bonanni

Chalmers, Teknisk fysik, Bionanofotonik

Alexander Dmitriev

Chalmers, Teknisk fysik, Bionanofotonik

Juergen Weis


Microelectronic Engineering

0167-9317 (ISSN)

Vol. 110 123-125





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