Thermal Characterization of THz Schottky Diodes Using Transient Current Measurements
Artikel i vetenskaplig tidskrift, 2014

This paper presents a new method for thermal characterization of THz Schottky diodes. The method is based on the transient current behavior, and it enables the extraction of thermal resistances, thermal time-constants, and peak junction temperatures of THz Schottky diodes. Many typical challenges in thermal characterization of small-area diode devices, particularly those related to self-heating and electrical transients, are either avoided or mitigated. The method is validated with measurements of commercially available single-anode Schottky varactor diodes. A verification routine is performed to ensure the accuracy of the measurement setup, and the characterization results are compared against an in-house measurement-based method and against simulation results of two commercial 3-D thermal simulators. For example, characterization result for the total thermal resistance of a Schottky diode with an anode area of 9 $muhbox{m}^{2}$ is within 10% of the average value of 4020 K/W when using all four approaches. The new method can be used to measure small diode devices with thermal time constants down to about 300 ns with the measurement setup described in the paper.

thermal impedance

transient measurements

thermal time constant

thermal parameters

thermal resistance

Schottky diode

junction temperature

Författare

S Khanal

Aalto-Yliopisto

Tero Kiuru

Teknologian Tutkimuskeskus (VTT)

Aik-Yean Tang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

MA Saber

Sinepulse GmbH

J Mallat

Aalto-Yliopisto

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Tapani Närhi

European Space Agency - ESA

Antti Räisänen

Aalto-Yliopisto

IEEE Transactions on Terahertz Science and Technology

2156-342X (ISSN)

Vol. 4 267-276 6742627

Styrkeområden

Informations- och kommunikationsteknik

Infrastruktur

Nanotekniklaboratoriet

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/TTHZ.2014.2303982