Wafer-scale graphene synthesis, transfer and FETs
Paper i proceeding, 2013

Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed.

semiconductor thin films

graphene

surface catalytic synthesis

Författare

K. B. K. Teo

AIXTRON Ltd.

B. You

AIXTRON Ltd.

N. Rupesinghe

AIXTRON Ltd.

A. Newham

AIXTRON Ltd.

P. Greenwood

AIXTRON Ltd.

S. Buttress

AIXTRON Ltd.

M. T. Cole

AIXTRON Ltd.

L. Tao

The University of Texas at Austin

J. Lee

The University of Texas at Austin

D. Akinwande

The University of Texas at Austin

K. Celebi

Eidgenössische Technische Hochschule Zürich (ETH)

H. Park

Eidgenössische Technische Hochschule Zürich (ETH)

Jie Sun

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Proceedings of the IEEE Conference on Nanotechnology

1944-9380 (eISSN)

1200-1203

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1109/NANO.2013.6720922

ISBN

9781479906758