Nonlinear model for 40-GHz cold-FET operation
Paper i proceeding, 2014

We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the nonlinear currents and charge. Secondly, one can perform nonlinear characterization, and subsequently modeling, even if the RF frequency is such that its harmonics cannot be measured by today's nonlinear network vector analyzers.

microwave transistors

nonlinear model

Microwave measurements


G. Avolio

KU Leuven

A. Raffo

University of Ferrara

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

V. Vadala

University of Ferrara

G. Crupi

Universita degli Studi di Messina

A. Caddemi

Universita degli Studi di Messina

G. Vannini

University of Ferrara

Dmmp Schreurs

KU Leuven

International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2014



Elektroteknik och elektronik