Small-Versus Large-Signal Extraction of Charge Models of Microwave FETs
Artikel i vetenskaplig tidskrift, 2014

In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear model which is available in commercial CAD tools. In particular, the charge model parameters are extracted starting from small- and large-signal measurements. A better accuracy can be achieved when using large-signal measurements since the model parameters are obtained from experimental data which better reproduce the actual operating condition of the device under test. An advanced 0.15 x 300 mu m(2) pHEMT in GaAs technology, aimed at cold-FET mixer design, is considered as case study.

nonlinear measurements


Microwave device modeling

Electrical & Electronic

nonlinear device modeling


G. Avolio

KU Leuven

A. Raffo

University of Ferrara

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

G. Crupi

Universita degli Studi di Messina

A. Caddemi

Universita degli Studi di Messina

G. Vannini

Universita degli Studi di Messina

Dmmp Schreurs

KU Leuven

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 24 6 394-396 6809854


Annan elektroteknik och elektronik



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