Josephson effect in Al/Bi2Se3/Al coplanar hybrid devices
Artikel i vetenskaplig tidskrift, 2014
The edge states of Topological Insulators (TI) are protected against backscattering, thanks to the topological properties arising from their band structure. Coupling a TI to a superconductor (S) can induce unconventional effects, including the creation of Majorana bound states (MBS). The fabrication of coplanar hybrid devices is a fundamental step to pave the way to the understanding of proximity effects in topologically non-trivial systems, and to a large variety of experiments aimed at the possible detection of MBS. We discuss the feasibility and some relevant properties of Al-Bi2Se3-Al coplanar proximity devices. Special attention is devoted to the design of the junction, aimed at enhancing the coupling between the electrodes and the TI.
Proximity effect
junctions
bi2te3
surface-state
single dirac cone
Josephson junctions
topological-insulator
superconducting
Coplanar hybrid devices
Topological insulators
bi2se3
transition
transport
Författare
L. Galletti
Superconductors, oxides and other innovative materials and devices
Universita degli Studi di Napoli Federico II
Sophie Charpentier
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
P. Lucignano
Universita degli Studi di Napoli Federico II
Superconductors, oxides and other innovative materials and devices
D. Massarotti
Universita degli Studi di Napoli Federico II
Superconductors, oxides and other innovative materials and devices
Riccardo Arpaia
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
F. Tafuri
Università degli Studi della Campania Luigi Vanvitelli
Superconductors, oxides and other innovative materials and devices
Thilo Bauch
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Y. Suzuki
University of Tsukuba
A. Tagliacozzo
Universita degli Studi di Napoli Federico II
Kazuo Kadowaki
University of Tsukuba
Floriana Lombardi
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Physica C: Superconductivity and its Applications
0921-4534 (ISSN)
Vol. 503 162-165Ämneskategorier
Fysik
DOI
10.1016/j.physc.2014.04.047