Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions
Artikel i vetenskaplig tidskrift, 2014

We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene vertical bar Ni interface.

Författare

F. Godel

IPCMS Institut de Physique et Chimie des Materiaux de Strasbourg

Venkata Kamalakar Mutta

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

B. Doudin

IPCMS Institut de Physique et Chimie des Materiaux de Strasbourg

Y. Henry

IPCMS Institut de Physique et Chimie des Materiaux de Strasbourg

D. Halley

IPCMS Institut de Physique et Chimie des Materiaux de Strasbourg

J. F. Dayen

IPCMS Institut de Physique et Chimie des Materiaux de Strasbourg

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 105 15 Art. no. 152407- 152407

Ämneskategorier

Annan teknik

DOI

10.1063/1.4898587