A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation
Paper i proceeding, 2013

In this work we describe a novel technique for the extraction of nonlinear model for microwave transistors from nonlinear measurements obtained by simultaneously driving the device under test with low- and high-frequency excitations. Specifically, the large-signal operating point of the device is set by large-signal low-frequency excitations. On top of these a tickle tone at high-frequency is applied. In this way, one can separate the contributions of the IDS current source and the charge sources by a single measurement. The nonlinear model, based on equations available in commercial CAD tools, is extracted for a 0.15 μm GaAs pHEMT. Good agreement is obtained between model predictions and experimental data.

Microwave FET

Q-V characteristics

I-V dynamic characteristics

Nonlinear transistor model

Nonlinear measurements

Författare

G. Avolio

KU Leuven

A. Raffo

University of Ferrara

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

G. Crupi

Universita degli Studi di Messina

G. Vannini

University of Ferrara

Dmmp Schreurs

KU Leuven

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

Art. no. 6697394- 6697394

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MWSYM.2013.6697394

ISBN

978-146736176-7