mm-Wave noise modeling in advanced SiGe and InP HBTs
Artikel i vetenskaplig tidskrift, 2015

DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transistors (HBTs) were measured and modeled in a broad frequency range. Equations for systematically modeled correlated noise in bipolar transistors and their implementation in the compact models HICUM/L0 and L2 are proposed. The models are verified for advanced SiGe HBTs up to 300 GHz by hydrodynamic device simulation and by results from the Boltzmann transport equation. The verified model was used for analyzing the noise of advanced InP/InGaAs and Si/SiGe HBTs. Compared to Si/SiGe HBTs a higher noise at lower frequencies was observed in InP/InGaAs HBTs due to a higher base recombination current. InP HBTs shows a good noise performance beyond 100 GHz and due to their better product can compete with advanced Si/SiGe HBTs for LNA design at mm-wave frequencies.

mm-Wave HBT

Noise parameters

HICUM

Si/SiGe HBT

Compact modeling

InP/InGaAs HBT

Författare

P. Sakalas

Technische Universität Dresden

Fiziniu ir Technologijos Mokslu Centras

M. Schroter

Technische Universität Dresden

University of California

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Journal of Computational Electronics

1569-8025 (ISSN)

Vol. 14 1 62-71

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1007/s10825-015-0664-6