Room temperature dry processing of patterned CVD graphene devices
Artikel i vetenskaplig tidskrift, 2015

We present a strategy for avoiding polymeric residues, excessive heating and solvent exposure when transforming large area transferred CVD graphene single layer films into series of planar devices. Such dry process is a key prerequisite for chemical functionalization applications or for organic electronics compatibility, and opens the possibility to integrate graphene electrodes with thermally or chemically sensitive materials, as well as substrates incompatible with lithography processing. Patterning and metal evaporation are performed through a multi-step mechanical stencils methodology, and low temperatures magneto transport measurements are used to validate devices with preserved electrical fingerprints of graphene. This is particularly critical for the argon beam milling process step. Remarkably, the Quantum Hall signature of our devices remains robust, even though defective sample edges result from the beam exposure. Shubnikov-de Hass (SdH) oscillations and weak (anti-) localization signatures of monolayer graphene confirm the excellent intrinsic properties of such processed samples, rarely observed on CVD-processed devices.


A. Mahmood

Université de Strasbourg

C. S. Yang

Korea Research Institute of Chemical Technology (KRICT)

J. F. Dayen

Université de Strasbourg

S. Park

Korea Research Institute of Chemical Technology (KRICT)

Venkata Kamalakar Mutta

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

D. Metten

Université de Strasbourg

S. Berciaud

Université de Strasbourg

J. O. Lee

Korea Research Institute of Chemical Technology (KRICT)

B. Doudin

Université de Strasbourg


0008-6223 (ISSN)

Vol. 86 256-263 9664


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