Dielectric response of Ba0.05Sr0.95TiO3(110) films to variations in temperature and electric field
Artikel i vetenskaplig tidskrift, 2015

Three-layer epitaxial heterostructures, in which a 1000-nm-thick intermediate layer of Ba 0.05 Sr 0.95 TiO 3 is integrated with strontium ruthenate conducting electrodes, have been grown by laser evaporation. Using photolithography and ion etching, film parallel-plate capacitors SrRuO 3 /Ba 0.05 Sr 0.95 TiO 3 /SrRuO 3 are formed based on the grown heterostructures. A sharp maximum in the temperature dependence of the capacitor capacitance is observed at T ≈ 75 K. At T < 100 K, the capacitance decreases by 50–60% upon applying a bias voltage V b = ±2.5 V to the oxide electrodes. The estimate of the specific capacitance (~2.1 μF/cm2) of the Ba 0.05 Sr 0.95 TiO 3 (110)/SrRuO 3 (110) interface is obtained. For T > 250 K and the measuring signal frequency of 1 kHz, the dielectric loss tangent of the film capacitors increases exponentially with increasing temperature.

Författare

Iouri Boikov

Russian Academy of Sciences

Tord Claeson

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Publicerad i

Physics of the Solid State

1063-7834 (ISSN) 1090-6460 (eISSN)

Vol. 57 Nummer/häfte 5 s. 957-961

Kategorisering

Ämneskategorier (SSIF 2011)

Den kondenserade materiens fysik

Identifikatorer

DOI

10.1134/S1063783415050030

Mer information

Senast uppdaterat

2018-07-04