Dielectric response of Ba0.05Sr0.95TiO3(110) films to variations in temperature and electric field
Artikel i vetenskaplig tidskrift, 2015

Three-layer epitaxial heterostructures, in which a 1000-nm-thick intermediate layer of Ba 0.05 Sr 0.95 TiO 3 is integrated with strontium ruthenate conducting electrodes, have been grown by laser evaporation. Using photolithography and ion etching, film parallel-plate capacitors SrRuO 3 /Ba 0.05 Sr 0.95 TiO 3 /SrRuO 3 are formed based on the grown heterostructures. A sharp maximum in the temperature dependence of the capacitor capacitance is observed at T ≈ 75 K. At T < 100 K, the capacitance decreases by 50–60% upon applying a bias voltage V b = ±2.5 V to the oxide electrodes. The estimate of the specific capacitance (~2.1 μF/cm2) of the Ba 0.05 Sr 0.95 TiO 3 (110)/SrRuO 3 (110) interface is obtained. For T > 250 K and the measuring signal frequency of 1 kHz, the dielectric loss tangent of the film capacitors increases exponentially with increasing temperature.


Iouri Boikov

Russian Academy of Sciences

Tord Claeson

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Physics of the Solid State

1063-7834 (ISSN) 1090-6460 (eISSN)

Vol. 57 5 957-961


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