The potential for sensitivity enhancement by the thermoelectric effect in carbon-nanotube and graphene Tera-FETs
Paper i proceeding, 2015
We report on terahertz (THz) measurements with graphene field-effect transistors with integrated antennas (Tera-FETs) lay special emphasis on thermoelectric contributions to the detected THz photoresponse. Graphene Tera-FETs with integrated broad-band bow-tie antennas were fabricated in a CVD-based growth process and were successfully applied for detection at 600 GHz with optical NEPs down to 515 pW/Hz^1/2. While rectification of THz radiation by (distributed) resistive mixing of charge-density waves induced in the gated transistor channel region is well known, significant additional contributions to the detected signal have experimentally been observed and hot-carrier thermoelectric effects have been identified as a possible origin of these signals. We also observe similar signal contributions in carbonnanotube transistors.
CVD graphene
direct terahertz detection
antenna-integrated detectors
Graphene field effect transistors
Författare
Maris Bauer
Johann Wolfgang Goethe Universität Frankfurt am Main
MICHAEL ANDERSSON
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Audrey Zak
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
P. Sakalas
Technische Universität Dresden
Dovilė Čibiraitė
Vilniaus universitetas
Alvydas Lisauskas
Johann Wolfgang Goethe Universität Frankfurt am Main
Vilniaus universitetas
M. Schroter
Technische Universität Dresden
Jan Stake
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Hartmut Roskos
Johann Wolfgang Goethe Universität Frankfurt am Main
Journal of Physics: Conference Series
17426588 (ISSN) 17426596 (eISSN)
Vol. 647 1 UNSP 012004- 012004Styrkeområden
Informations- och kommunikationsteknik
Nanovetenskap och nanoteknik
Ämneskategorier
Nanoteknik
Annan elektroteknik och elektronik
Infrastruktur
Nanotekniklaboratoriet
DOI
10.1088/1742-6596/647/1/012004