Low phase noise power-efficient MMIC GaN-HEMT Oscillator at 15 GHz based on a Quasi-lumped on-chip resonator
Paper i proceeding, 2015

This paper reports on a negative resistance 15 GHz GaN HEMT oscillator using a quasi-lumped integrated resonator. The resonator is based on a lumped element parallel LC resonator and a piece of transmission line acting as impedance transformer and phase compensation. The main advantage of this type of resonator is that it gives good flexibility in choice of impedance level so that it is easy to control the coupling factor between the active device and the resonator which is mandatory to reach good phase noise. An excellent phase noise of -106 dBc/Hz@100 kHz from a 15 GHz carrier is experimentally demonstrated. The oscillator is also very power efficient with a power normalized figure of merit (FOM) of 191 dB, extracted at 100 kHz offset. To the authors' best knowledge this is the highest FOM reported for a GaN HEMT MMIC oscillator.

LF-noise

oscillator

GaN HEMT

phase noise

Författare

Mikael Hörberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2015 IEEE MTT-S International Microwave Symposium, IMS 2015

7166767

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MWSYM.2015.7166767

ISBN

978-1-4799-8275-2

Mer information

Skapat

2017-10-07