Thermal constraints for heterostructure barrier varactors
Artikel i vetenskaplig tidskrift, 2004

Current research on heterostructure barrier varactors (HBVs) devotes much effort to the generation of very high power levels in the millimeter wave region. One way of increasing the power handling capacity of HBVs is to stack several barriers epitaxially. However, the small device dimensions lead to very high temperatures in the active layers, deteriorating the performance. We have derived analytical expressions and combined those with finite element simulations, and used the results to predict the maximum effective number of barriers for HBVs. The thermal model is also used to compare the peak temperature and power handling capacity of GaAs and InP-based HBVs. It is argued that InP-based devices may be inappropriate for high-power applications due to the poor thermal conductivity of the InGaAs modulation layers.

frequency multiplier

semiconductor device thermal factors

heterostructure barrier varactor (HBV)

Författare

Mattias Ingvarson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Byron Alderman

Rutherford Appleton Laboratory

Arne Olsen

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Josip Vukusic

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 25 713-715

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/LED.2004.836804