Design and analysis of 500 GHz heterostructure barrier varactor quintuplers
Artikel i vetenskaplig tidskrift, 2003

We report on the design and analysis of heterostructure barrier varactor (HBV) frequency quintuplers with an output frequency of 500 GHz. The HBV is a symmetric varactor, thus only odd harmonics are generated and no DC bias is required. By incorporating several barriers in the device, the HBV is also capable of handling higher power levels than conventional varactors. This makes the HBV superior to the traditional Schottky varactor for high order frequency multiplier circuits. We present analytical, temperature dependent models, which can be used to calculate parameters such as optimum doping concentration, layer structure, device area and series resistance for HBVs, as well as to predict the performance with respect to conversion efficiencies and output power levels. These parameters are then further optimised by harmonic balance simulations in commercial microwave EDA tools, for which we have developed accurate device models. We investigate the influence of embedding impedance levels for optimum conversion efficiency by means of analytical expressions and harmonic balance simulations. Theoretical calculations predict a maximum diode conversion efficiency for a planar, six-barrier InGaAs HBV of more than 30%, for an input power level of 19 dBm. A waveguide circuit realisation of a 500 GHz HBV quintupler is presented.

frequency multiplier

heterostructure barrier varactor (HBV)

sub-millimetre wave

symmetric varactor

sub-millimetre wave

semiconductor diode

Författare

Mattias Ingvarson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Arne Olsen

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Ämneskategorier

Elektroteknik och elektronik