Effect of ferroelectric substrate on carrier mobility in graphene field-effect transistors
Artikel i vetenskaplig tidskrift, 2015

Effect of LiNbO3 ferroelectric substrate on the carrier mobility in top gated graphene field-effect transistors (G-FETs) is demonstrated. It is shown that, at the same residual concentration of the charge carriers, the mobility in the G-FETs on the LiNbO3 substrate is higher than that on the SiO2/ Si substrate. The effect is associated with reduction of Coulomb scattering via screening the charged impurity field by the field induced in the ferroelectric substrate, but significant only for mobilities below 1000 cm2/V s. Raman spectra analysis and correlations established between mobility and microwave loss tangent of the Al2O3 gate dielectric indicate that the charged impurities are located predominantly at the gate dielectric and/or at the gate dielectric/graphene interface and are likely associated with oxygen vacancies.

graphene

carrier mobility

ferroelectric

field-effect transistor

gate dielectric

Författare

Samina Bidmeshkipour

Ferdowsi University of Mashhad

Andrei Vorobiev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

MICHAEL ANDERSSON

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Ahmad Kompany

Ferdowsi University of Mashhad

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 107 Article Number: 173106- 173106

Ämneskategorier

Nanoteknik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1063/1.4934696