90 nm CMOS MMIC amplifier
Paper i proceeding, 2004

Small signal amplifiers at 20 and 40 GHz, based on a 90 nm CMOS process are demonstrated. A gain of 5.8 dB at 20 GHz for single stage has been obtained with a 1 dB compression point at 1 dBm. The corresponding figures for the 40 GHz amplifiers are 6 dB and -5.75 dBm. Noise figure for the 20 GHz amplifier is 6.4 dB. Both single gate access and double gate access transistors have been used in the design. DC power consumption of the 20 GHz single stage amplifier was found to be 10 mW whereas for the 40 GHz double stage amplifier it is approximately 19 mW. Total circuit area is 0.7/spl times/0.8 mm/sup 2/ for the single stage and 1/spl times/0.7 mm/sup 2/ for the 40 GHz double stage amplifier.

Författare

M. Anowar Masud

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Ferndahl

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Hans-Olof Vickes

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

1529-2517 (ISSN)

201 - 204

Ämneskategorier

Annan elektroteknik och elektronik