The Role of Quantum Interference Effects in Normal-State Transport Properties of Electron-Doped Cuprates
Artikel i vetenskaplig tidskrift, 2015
The normal-state resistivity of thin films of the infinite-layer electron-doped cuprate Sr (1-x) La (x) CuO (2 +/-delta) has been investigated. Under-doped samples, which clearly show a metal-to-insulator transition (MIT) at low temperatures, have allowed the determination of the fundamental physical mechanism behind the upturn of the resistivity, namely the quantum interference effects (QIEs) in three-dimensional systems. The occurrence of weak localization effects has been unambiguously proven by low-frequency voltage spectral density measurements, which show a linear dependence of the 1/f noise on the applied bias current at low temperatures. The identification of the QIEs at low temperatures has therefore allowed the determination of the high-temperature non-Fermi liquid metallic phase, which is dominated by a linear temperature dependence of the resistivity for all of the samples investigated.
Superconductivity
Electron-doped cuprates
Metal-insulator-transition
Författare
P. Orgiani
Consiglio Nazionale delle Ricerche (CNR)
A. Galdi
Universita degli Studi di Salerno
Consiglio Nazionale delle Ricerche (CNR)
C. Sacco
Universita degli Studi di Salerno
Consiglio Nazionale delle Ricerche (CNR)
Riccardo Arpaia
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Sophie Charpentier
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Floriana Lombardi
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
C. Barone
Consiglio Nazionale delle Ricerche (CNR)
Universita degli Studi di Salerno
S. Pagano
Universita degli Studi di Salerno
Consiglio Nazionale delle Ricerche (CNR)
D. G. Schlom
Cornell University
L. Maritato
Universita degli Studi di Salerno
Consiglio Nazionale delle Ricerche (CNR)
Journal of Superconductivity and Novel Magnetism
1557-1939 (ISSN) 1557-1947 (eISSN)
Vol. 28 12 3481-3486Styrkeområden
Nanovetenskap och nanoteknik
Ämneskategorier (SSIF 2011)
Nanoteknik
DOI
10.1007/s10948-015-3209-0