Shot-noise suppression effects in InGaAs planar diodes at room temperature
Paper i proceeding, 2015

In this work, the noise characteristics of InGaAs planar diodes are studied. The presence of a recessed region originates a barrier in the potential profile, which can modulate the passage of ballistic carriers along the structure. This effect, in turn, may lead to suppressed levels of noise with respect to the full Poissonian value due to Coulomb interaction. With the aim of evidencing such phenomenon, the noise properties of a set of devices with different dimensions have been measured at room temperature. Some evidence of potential shot-noise suppression is observed in the results, but the undesired effect of resistive contacts and accesses has been found to be a limiting factor to quantify the suppression accurately.

Författare

Ó García-Pérez

Universidad de Salamanca

H. Sánchez-Martín

J. Mateos

Universidad de Salamanca

Susana Muñoz Pérez

Universidad de Salamanca

Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

T. Gonzalez

Universidad de Salamanca

Journal of Physics: Conference Series

1742-6588 (ISSN)

Vol. 647 012061

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1088/1742-6596/647/1/012061