Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL
Paper i proceeding, 2016

We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.

silicon photonics

semiconductor lasers

large signal modulation

optical interconnects

vertical-cavity surface-emitting laser (VCSEL).

High-speed modulation

Författare

Emanuel Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Sulakshna Kumari

Universiteit Gent

Petter Westbergh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Gunther Roelkens

Universiteit Gent

Roel G. Baets

Universiteit Gent

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN) 1996756X (eISSN)

Vol. 9766 976607

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Telekommunikation

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1117/12.2207301

ISBN

978-1-5106-0001-0