Experimental analysis of shot-noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature
Paper i proceeding, 2015

In this work, current noise measurements of submicron InGaAs/InAlAs recessed planar diodes are presented. The presence of a barrier in the potential profile under the source side of the recess may affect the statistics of passage of carriers, which in turn would lead to suppressed shot noise levels. However, evidencing this noise suppression from the measurements is challenging, due to the undesired effects from the accesses and contact resistances. The presented results are provided as a starting point for a future de-embedding process able to precisely determine the actual noise properties below the recess.

mesoscopic devices

shot noise

III-V semiconductor materials

Noise measurement


Ó García-Pérez

Universidad de Salamanca

J. Mateos

Universidad de Salamanca

Susana Muñoz Pérez

Universidad de Salamanca

T. Gonzalez

Universidad de Salamanca

Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

2015 International Conference on Noise and Fluctuations, ICNF 2015

978-1-4673-8335-6 (ISBN)


Elektroteknik och elektronik





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