Impact of O2 flow rate on the growth rate of ZnO(0001) and ZnO(000-1) on GaN by plasma-assisted molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2016

We studied the effects of a varying O$ flow rate on the growth of ZnO(0001) and ZnO(000-1) layers on GaN/Al2O3-templates by plasma-assisted molecular beam epitaxy. The O2 flow rate through the O-plasma source was varied between 0.25--4.5 standard cubic centimeters per minute corresponding to a growth chamber pressure between 3.0 x 10^-6 -- 5.0x10^-5 Torr. We found that the change of the O2 flow rate had a profound effect on the ZnO layer growth rate. A maximum growth rate was reached for an O2 flow rate of 1.0--2.0 standard cubic centimeters per minute. The same growth rate dependence on the O2 flow rate was observed for ZnO(0001) layers that were grown on GaN/4H-SiC buffer layers for verification. To assess the amount of active O contributing to the ZnO-growth, the spectral composition of the plasma was investigated with optical emission spectroscopy. The integrated optical emission line intensity reached a maximum for an O2 flow rate between 1.0--2.0 standard cubic centimeters per minute. Essentially all emission lines exhibited a maximum intensity for an O2 flow rate between 1.0--2.0 standard cubic centimeters per minute thus coinciding with the flow rate yielding the maximum growth rate.

plasma

MBE

Oxygen

ZnO

Författare

David Adolph

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Tommy Ive

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Physica Status Solidi (B): Basic Research

0370-1972 (ISSN) 1521-3951 (eISSN)

Vol. 253 8 1523-1528

Infrastruktur

Nanotekniklaboratoriet

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1002/pssb.201552764

Mer information

Skapat

2017-10-07